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Kingston 9965525-144.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
比较
Kingston 9965525-144.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
总分
Kingston 9965525-144.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965525-144.A00LF 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
37
70
左右 -89% 更低的延时
更快的读取速度,GB/s
9.5
6.5
测试中的平均数值
更快的写入速度,GB/s
7.7
4.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston 9965525-144.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
70
37
读取速度,GB/s
6.5
9.5
写入速度,GB/s
4.6
7.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1264
1949
Kingston 9965525-144.A00LF 8GB RAM的比较
Kingston 9965525-153.A00LF 8GB
Ramaxel Technology RMUA5210ME88HCF-3200 32GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Micron Technology 36ASF4G72LZ-2G3B1 32GB
Kingston 9905403-061.A00LF 2GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.CAGN4.4020B 8GB
Crucial Technology CT51264BD1339.M16F 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Kingston K1N7HK-ELC 2GB
Kingston 9905630-063.A00G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
报告一个错误
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Bug description
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