RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12.3
9.5
测试中的平均数值
更快的写入速度,GB/s
8.0
7.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
37
45
左右 -22% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
37
读取速度,GB/s
12.3
9.5
写入速度,GB/s
8.0
7.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
1949
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Kingston KVR16N11/8-SP 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
PNY Electronics PNY 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Kingston ACR256X64D3S1333C9 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK64GX4M4A2666C16 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-16GVKA 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston X5H5PW-MIE 8GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Samsung M378B5773DH0-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Avant Technology F6451U64F9333G 4GB
Corsair CMK8GX4M1A2400C16 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston KHX2666C15D4/4G 4GB
报告一个错误
×
Bug description
Source link