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Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB

Samsung 1600 CL10 Series 8GB vs SK Hynix HMA82GS6DJR8N-XN 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 32% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.3
    测试中的平均数值
SK Hynix HMA82GS6DJR8N-XN 16GB 需要考虑的原因
SK Hynix HMA82GS6DJR8N-XN 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.9 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 37
  • 读取速度，GB/s
    16.1 left arrow 15.3
  • 写入速度，GB/s
    10.1 left arrow 12.9
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2973

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GS6DJR8N-XN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Kingston 9905625-098.A00G 16GB
Kingston 9905625-098.A00G 16GB
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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Kingston 99U5702-101.A00G 8GB
内存RAM
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
A-DATA Technology AD5U480016G-B 16GB
A-DATA Technology AD5U480016G-B 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Corsair CMWX16GC3200C16W4 16GB
Corsair CMWX16GC3200C16W4 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M4C3200C16 4GB
Corsair CMD16GX4M4C3200C16 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Kingston ACR26D4S9S8MH-8 8GB
Kingston ACR26D4S9S8MH-8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Corsair CMW32GX4M4K3733C17 8GB
Corsair CMW32GX4M4K3733C17 8GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM