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Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3200C16-8GVRB 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-3200C16-8GVRB 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
G Skill Intl F4-3200C16-8GVRB 8GB

G Skill Intl F4-3200C16-8GVRB 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 17.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3200C16-8GVRB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GVRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 33
    左右 -6% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3200C16-8GVRB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 31
  • 读取速度，GB/s
    17.8 left arrow 17.7
  • 写入速度，GB/s
    12.5 left arrow 13.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 3313

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C16-8GVRB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Kingston 9905701-022.A00G 16GB
Kingston 9905701-022.A00G 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM
Corsair CM3B4G2C1600L9 4GB
Corsair CM3B4G2C1600L9 4GB
Corsair CMD128GX4M8A2666C15 16GB
Corsair CMD128GX4M8A2666C15 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
内存RAM
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Nanya Technology M2S8G64CC8HB5N-DI 8GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905744-024.A00G 16GB
Kingston 9905744-024.A00G 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C15-16GTZKW 16GB
G Skill Intl F4-3200C15-16GTZKW 16GB
内存RAM