STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-4400C17-16GVK 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 22.3

测试中的平均数值

G Skill Intl F4-4400C17-16GVK 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的写入速度，GB/s

20.0 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-4400C17-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

3,231.0 22.3
写入速度，GB/s

1,447.3 20.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 4051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5584-004.A00LF 4GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

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PNY Electronics 4GBH1X04F1AA28-15 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB