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Kingston 9965525-155.A00LF 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Kingston 9965525-155.A00LF 8GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 69
    左右 -138% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 29
  • 读取速度，GB/s
    6.4 left arrow 22.8
  • 写入速度，GB/s
    3.7 left arrow 16.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 3792

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
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内存RAM
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