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Kingston 9965525-155.A00LF 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB

Kingston 9965525-155.A00LF 8GB vs Crucial Technology BL32G32C16U4R.M16FB1 32GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Crucial Technology BL32G32C16U4R.M16FB1 32GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Crucial Technology BL32G32C16U4R.M16FB1 32GB 需要考虑的原因
Crucial Technology BL32G32C16U4R.M16FB1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 69
    左右 -138% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 29
  • 读取速度，GB/s
    6.4 left arrow 17.5
  • 写入速度，GB/s
    3.7 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 3806

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Kingston KHX2400C15D4/4G 4GB
Kingston KHX2400C15D4/4G 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston KHX2400C15/8G 8GB
Kingston KHX2400C15/8G 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMD32GX4M4B3733C17 8GB
Corsair CMD32GX4M4B3733C17 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK16GX4M2A2133C13 8GB
Corsair CMK16GX4M2A2133C13 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM