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Kingston 9965525-155.A00LF 8GB
Kingston KF3200C20S4/8G 8GB

Kingston 9965525-155.A00LF 8GB vs Kingston KF3200C20S4/8G 8GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Kingston KF3200C20S4/8G 8GB 需要考虑的原因
Kingston KF3200C20S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 69
    左右 -60% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Kingston KF3200C20S4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 43
  • 读取速度，GB/s
    6.4 left arrow 15.4
  • 写入速度，GB/s
    3.7 left arrow 13.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 2776

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Kingston KF3200C20S4/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston 9965662-015.A00G 16GB
内存RAM
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内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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内存RAM
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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Corsair CMV4GX3M1B1600C11 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
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Samsung M393B2G70AH0-YH9 16GB
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Kingston KF2666C13D4/8GX 8GB
内存RAM