Kingston 9965662-016.A00G 16GB vs Crucial Technology BLS16G4D30AESE.M16FE 16GB

总分

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

总分

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

差异规格评论

差异

Kingston 9965662-016.A00G 16GB

需要考虑的原因
Kingston 9965662-016.A00G 16GB

报告一个错误

Crucial Technology BLS16G4D30AESE.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESE.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

17.6 7.9

测试中的平均数值
更快的写入速度，GB/s

13.3 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Kingston 9965662-016.A00G 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

7.9 17.6
写入速度，GB/s

7.8 13.3
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 3446

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AX4S2800316G18-B 16GB

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Crucial Technology BL32G36C16U4B.M16FB1 32GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Kingston 9905403-134.A00LF 2GB

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G Skill Intl F4-2400C17-8GISM 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-3000C14-16GVR 16GB