Kingston 9965662-016.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Kingston 9965662-016.A00G 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

总分

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

差异规格评论

差异

Kingston 9965662-016.A00G 16GB

需要考虑的原因
Kingston 9965662-016.A00G 16GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

13.8 7.9

测试中的平均数值
更快的写入速度，GB/s

10.4 7.8

测试中的平均数值

规格

完整的技术规格清单

Kingston 9965662-016.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

7.9 13.8
写入速度，GB/s

7.8 10.4
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 2354

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965662-016.A00G 16GB

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Crucial Technology CT16G4SFS832A.C8FE 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Kingston 99U5704-001.A00G 4GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Apacer Technology 76.D105G.D090B 16GB

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Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-4000C16-16GVK 16GB

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Corsair CM4X4GF2400C16S2 4GB

Corsair CM4X4GF2400C16S2 4GB