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SK Hynix HYMP512S64CP8-Y5 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB

SK Hynix HYMP512S64CP8-Y5 1GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分
star star star star star
SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分
star star star star star
Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异 规格 评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB 需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 23.7
    测试中的平均数值
Chun Well Technology Holding Limited D4U1636144B 16GB 需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 68
    左右 -162% 更低的延时
  • 更快的写入速度，GB/s
    18.3 left arrow 1,670.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP512S64CP8-Y5 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 26
  • 读取速度，GB/s
    3,554.9 left arrow 23.7
  • 写入速度，GB/s
    1,670.7 left arrow 18.3
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    513 left arrow 4124

SK Hynix HYMP512S64CP8-Y5 1GB RAM的比较

Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-4000C18-8GTZR 8GB

Chun Well Technology Holding Limited D4U1636144B 16GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMD32GX4M4C3200C16-R 8GB
Corsair CMD32GX4M4C3200C16-R 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMT32GX4M2C3200C14 16GB
Corsair CMT32GX4M2C3200C14 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2133C15-4GVK 4GB
G Skill Intl F4-2133C15-4GVK 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905678-006.A00G 4GB
Kingston 9905678-006.A00G 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CM4B8G1J2800K14K 8GB
Corsair CM4B8G1J2800K14K 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM