Kingston 99P5474-014.A00LF 4GB vs Corsair CMR16GX4M2A2666C16 8GB

总分

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

总分

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

差异规格评论

差异

Kingston 99P5474-014.A00LF 4GB

需要考虑的原因
Kingston 99P5474-014.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Corsair CMR16GX4M2A2666C16 8GB

需要考虑的原因
Corsair CMR16GX4M2A2666C16 8GB

报告一个错误

更快的读取速度，GB/s

16.5 11.2

测试中的平均数值
更快的写入速度，GB/s

12.3 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99P5474-014.A00LF 4GB

Corsair CMR16GX4M2A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.2 16.5
写入速度，GB/s

7.1 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1936 3072

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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PUSKILL DDR3 1600 8G 8GB

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Samsung M471A1G43DB0-CPB 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kllisre D4 8G 8GB

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SK Hynix DDR2 800 2G 2GB

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Kingston 9905471-002.A00LF 2GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

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Kingston 9965525-018.A00LF 4GB

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Smart Modular SF464128CKHI6DFSEG 4GB

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Corsair CMV4GX4M1A2400C16 4GB