Kingston 99U5315-023.A00LF 512MB vs Corsair CMD32GX4M4B2400C10 8GB

总分

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

总分

Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

差异规格评论

差异

Kingston 99U5315-023.A00LF 512MB

需要考虑的原因
Kingston 99U5315-023.A00LF 512MB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值

Corsair CMD32GX4M4B2400C10 8GB

需要考虑的原因
Corsair CMD32GX4M4B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更快的写入速度，GB/s

11.5 1,769.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5315-023.A00LF 512MB

Corsair CMD32GX4M4B2400C10 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

4,482.7 16.1
写入速度，GB/s

1,769.9 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GR7AFR8N-VK 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Corsair CML8GX3M2A1600C9 4GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB