Samsung M4 70T5663CZ3-CE6 2GB vs Nanya Technology NT2GT64U8HD0BN-3C 2GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Nanya Technology NT2GT64U8HD0BN-3C 2GB

Nanya Technology NT2GT64U8HD0BN-3C 2GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

Nanya Technology NT2GT64U8HD0BN-3C 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-3C 2GB

报告一个错误

低于PassMark测试中的延时，ns

61 69

左右 -13% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

1,864.6 1,441.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Nanya Technology NT2GT64U8HD0BN-3C 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

69 61
读取速度，GB/s

3,325.1 4,521.7
写入速度，GB/s

1,441.2 1,864.6
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

525 775

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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