Samsung M4 70T5663CZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Samsung M4 70T5663CZ3-CE6 2GB vs Nanya Technology NT2GT64U8HD0BN-3C 2GB

Overall score
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score
star star star star star
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Nanya Technology NT2GT64U8HD0BN-3C 2GB

Differences

  • Below the latency in the PassMark tests, ns
    61 left arrow 69
    Around -13% lower latency
  • Faster reading speed, GB/s
    4 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    1,864.6 left arrow 1,441.2
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    69 left arrow 61
  • Read speed, GB/s
    3,325.1 left arrow 4,521.7
  • Write speed, GB/s
    1,441.2 left arrow 1,864.6
  • Memory bandwidth, mbps
    5300 left arrow 5300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    525 left arrow 775
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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