Kingston 99U5316-033.A00LF 2GB vs G Skill Intl F2-8500CL5-2GBPK 2GB

总分

Kingston 99U5316-033.A00LF 2GB

Kingston 99U5316-033.A00LF 2GB

总分

G Skill Intl F2-8500CL5-2GBPK 2GB

G Skill Intl F2-8500CL5-2GBPK 2GB

差异规格评论

差异

Kingston 99U5316-033.A00LF 2GB

需要考虑的原因
Kingston 99U5316-033.A00LF 2GB

报告一个错误

G Skill Intl F2-8500CL5-2GBPK 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPK 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 54

左右 -8% 更低的延时
更快的读取速度，GB/s

5 4

测试中的平均数值
更快的写入速度，GB/s

2,597.9 2,248.6

测试中的平均数值

规格

完整的技术规格清单

Kingston 99U5316-033.A00LF 2GB

G Skill Intl F2-8500CL5-2GBPK 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

54 50
读取速度，GB/s

4,821.1 5,846.0
写入速度，GB/s

2,248.6 2,597.9
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

801 1100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GTZ 8GB

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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Samsung M378A2K43EB1-CWE 16GB

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Samsung M471B5173QH0-YK0 4GB

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Ramaxel Technology RMUA5090KB78HAF2133 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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AMD R948G3206U2S 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-3200C16-16GTZ 16GB

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Kingston 99U5316-033.A00LF 2GB

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G Skill Intl F2-8500CL5-2GBPK 2GB

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Mushkin 991586 2GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Chun Well Technology Holding Limited D4U0830160B 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

Crucial Technology CT25664AA800.M16FG 2GB

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Corsair CM4X16GC3000C16K8 16GB

Corsair CM4X16GC3000C16K8 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

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V-GEN D4S8GL30A8TS5 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Patriot Memory (PDP Systems) PSD48G213381 8GB

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