Kingston 99U5403-036.A00G 4GB vs Samsung M378A2K43CB1-CTD 16GB

总分

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

差异规格评论

差异

Kingston 99U5403-036.A00G 4GB

需要考虑的原因
Kingston 99U5403-036.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Samsung M378A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M378A2K43CB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

16.2 15.7

测试中的平均数值
更快的写入速度，GB/s

12.0 9.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5403-036.A00G 4GB

Samsung M378A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

15.7 16.2
写入速度，GB/s

9.8 12.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2388 3116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N