Kingston 99U5403-036.A00G 4GB vs Samsung M378A5143DB0-CPB 4GB

总分

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异规格评论

差异

Kingston 99U5403-036.A00G 4GB

需要考虑的原因
Kingston 99U5403-036.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时
更快的读取速度，GB/s

15.7 14.4

测试中的平均数值

Samsung M378A5143DB0-CPB 4GB

需要考虑的原因
Samsung M378A5143DB0-CPB 4GB

报告一个错误

更快的写入速度，GB/s

10.6 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5403-036.A00G 4GB

Samsung M378A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

15.7 14.4
写入速度，GB/s

9.8 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2388 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMW64GX4M4C3466C16 16GB

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Teikon TMA851S6AFR6N-UHHC 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905678-005.A00G 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Corsair CMK64GX4M2A2400C16 32GB

Corsair CMK64GX4M2A2400C16 32GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

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Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB