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Kingston 99U5403-036.A00G 4GB
Samsung M471A5644EB0-CPB 2GB

Kingston 99U5403-036.A00G 4GB vs Samsung M471A5644EB0-CPB 2GB

总分
star star star star star
Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

差异 规格 评论

差异

Kingston 99U5403-036.A00G 4GB 需要考虑的原因
Kingston 99U5403-036.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 9.1
    测试中的平均数值
Samsung M471A5644EB0-CPB 2GB 需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5403-036.A00G 4GB
Samsung M471A5644EB0-CPB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 28
  • 读取速度，GB/s
    15.7 left arrow 13.2
  • 写入速度，GB/s
    9.8 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2388 left arrow 1989

Kingston 99U5403-036.A00G 4GB RAM的比较

Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB

Samsung M471A5644EB0-CPB 2GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Samsung M471A5644EB0-CPB 2GB
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内存RAM
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内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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Corsair CMV4GX4M1A2133C15 4GB
内存RAM
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内存RAM
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Kingston 9965525-018.A00LF 4GB
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Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Corsair CMW8GX4M1Z3600C18 8GB
内存RAM