Kingston 99U5428-018.A00LF 8GB vs Corsair CMW16GX4M2C3200C14 8GB

总分

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

总分

Corsair CMW16GX4M2C3200C14 8GB

Corsair CMW16GX4M2C3200C14 8GB

差异规格评论

差异

Kingston 99U5428-018.A00LF 8GB

需要考虑的原因
Kingston 99U5428-018.A00LF 8GB

报告一个错误

Corsair CMW16GX4M2C3200C14 8GB

需要考虑的原因
Corsair CMW16GX4M2C3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 47

左右 -104% 更低的延时
更快的读取速度，GB/s

19.9 12.2

测试中的平均数值
更快的写入速度，GB/s

16.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5428-018.A00LF 8GB

Corsair CMW16GX4M2C3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 23
读取速度，GB/s

12.2 19.9
写入速度，GB/s

8.2 16.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2128 3832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905734-018.A00G 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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G Skill Intl F4-4000C18-8GVK 8GB

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Kingston 99U5428-018.A00LF 8GB

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Corsair CMW16GX4M2C3200C14 8GB

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Kingston 99U5474-038.A00LF 4GB

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Kingston HX318C10FK/4 4GB

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Kingston KY7N41-MID 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMU16GX4M2A2666C16 8GB

Corsair CMU16GX4M2A2666C16 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB