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Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA82GR7MFR4N-UH 16GB

Kingston 99U5428-018.A00LF 8GB vs SK Hynix HMA82GR7MFR4N-UH 16GB

总分
star star star star star
Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

总分
star star star star star
SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB

差异 规格 评论

差异

Kingston 99U5428-018.A00LF 8GB 需要考虑的原因
Kingston 99U5428-018.A00LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 52
    左右 10% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.6
    测试中的平均数值
SK Hynix HMA82GR7MFR4N-UH 16GB 需要考虑的原因
SK Hynix HMA82GR7MFR4N-UH 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA82GR7MFR4N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 52
  • 读取速度，GB/s
    12.2 left arrow 10.4
  • 写入速度，GB/s
    8.2 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2128 left arrow 2384

Kingston 99U5428-018.A00LF 8GB RAM的比较

Crucial Technology CT25664BF160BJ.M4F 2GB
Corsair CMR32GX4M4C3000C16 8GB

SK Hynix HMA82GR7MFR4N-UH 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Samsung M378B5773DH0-CH9 2GB
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内存RAM
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内存RAM
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Micron Technology 16G3200CL22 16GB
内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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