Kingston 99U5429-007.A00LF 2GB vs G Skill Intl F4-4000C19-16GTZSW 16GB

总分

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

差异规格评论

差异

Kingston 99U5429-007.A00LF 2GB

需要考虑的原因
Kingston 99U5429-007.A00LF 2GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值
更快的写入速度，GB/s

2,036.1 13.6

测试中的平均数值

G Skill Intl F4-4000C19-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 75

左右 -241% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-4000C19-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 22
读取速度，GB/s

3,986.4 16.9
写入速度，GB/s

2,036.1 13.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

714 3192

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Essencore Limited KD48GU880-36A180Z 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMK16GX4M2Z3600C18 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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AMD AE34G2139U2 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Samsung M471B1G73BH0-YK0 8GB

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Samsung M471B1G73DX0-YK0 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB