RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 99U5429-007.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB
比较
Kingston 99U5429-007.A00LF 2GB vs Golden Empire CL19-25-25 D4-4000 4GB
总分
Kingston 99U5429-007.A00LF 2GB
总分
Golden Empire CL19-25-25 D4-4000 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
更快的读取速度,GB/s
3
17.5
测试中的平均数值
更快的写入速度,GB/s
2,036.1
12.8
测试中的平均数值
需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
75
左右 -226% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
23
读取速度,GB/s
3,986.4
17.5
写入速度,GB/s
2,036.1
12.8
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
714
3037
Kingston 99U5429-007.A00LF 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Golden Empire CL19-25-25 D4-4000 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Kingston KP223C-ELD 2GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK32GX4M4Z3200C16 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905665-014.A00G 4GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
SK Hynix DDR2 800 2G 2GB
Essencore Limited KD48GU881-26N190D 8GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M8X4000C19 8GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Samsung M471A1K43DB1-CWE 8GB
Heoriady M471A1K43BB1-CRC 16GB
报告一个错误
×
Bug description
Source link