Kingston 99U5429-014.A00LF 4GB vs Corsair CMD16GX4M2A2400C14 8GB

总分

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

总分

Corsair CMD16GX4M2A2400C14 8GB

Corsair CMD16GX4M2A2400C14 8GB

差异规格评论

差异

Kingston 99U5429-014.A00LF 4GB

需要考虑的原因
Kingston 99U5429-014.A00LF 4GB

报告一个错误

Corsair CMD16GX4M2A2400C14 8GB

需要考虑的原因
Corsair CMD16GX4M2A2400C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 72

左右 -227% 更低的延时
更快的读取速度，GB/s

18.6 4.9

测试中的平均数值
更快的写入速度，GB/s

13.8 2.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-014.A00LF 4GB

Corsair CMD16GX4M2A2400C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

72 22
读取速度，GB/s

4.9 18.6
写入速度，GB/s

2.9 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

776 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-16GSXWB 16GB

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Samsung M393A1G40DB0-CPB 8GB

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Kingston KVR800D2N6/2G 2GB

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Corsair CM4X32GE2666C18S2 32GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9905678-110.A00G 8GB

Kingston 9905678-110.A00G 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston KC5N22-MIE 16GB