Kingston 99U5469-045.A00LF 4GB vs Corsair CMK16GX4M2K4333C19 8GB

总分

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

总分

Corsair CMK16GX4M2K4333C19 8GB

Corsair CMK16GX4M2K4333C19 8GB

差异规格评论

差异

Kingston 99U5469-045.A00LF 4GB

需要考虑的原因
Kingston 99U5469-045.A00LF 4GB

报告一个错误

Corsair CMK16GX4M2K4333C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4333C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 42

左右 -133% 更低的延时
更快的读取速度，GB/s

20.1 12.8

测试中的平均数值
更快的写入速度，GB/s

19.5 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5469-045.A00LF 4GB

Corsair CMK16GX4M2K4333C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 18
读取速度，GB/s

12.8 20.1
写入速度，GB/s

8.3 19.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2095 3704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

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Samsung M471B5673FH0-CF8 2GB

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Kingston 99U5469-045.A00LF 4GB

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Corsair CMK16GX4M2K4333C19 8GB

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Kingston 99U5458-002.A00LF 2GB

Kingston 99U5458-002.A00LF 2GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMK32GX4M4B3866C18 8GB

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Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB