Kingston 99U5469-045.A00LF 4GB vs G Skill Intl F4-4133C19-8GTZKWC 8GB

总分

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

总分

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

差异规格评论

差异

Kingston 99U5469-045.A00LF 4GB

需要考虑的原因
Kingston 99U5469-045.A00LF 4GB

报告一个错误

G Skill Intl F4-4133C19-8GTZKWC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZKWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

19 12.8

测试中的平均数值
更快的写入速度，GB/s

17.0 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

12.8 19.0
写入速度，GB/s

8.3 17.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2095 3929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD64GX4M8B3200C16 8GB

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A-DATA Technology DDR4 3600 8GB

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Ramaxel Technology RMUA5110ME78HAF-2666 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Samsung M471A1A43DB0-CPB 8GB

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Samsung M471B5273DH0-CK0 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB