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Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
比较
Kingston 99U5469-045.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kingston 99U5469-045.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5469-045.A00LF 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
42
左右 -75% 更低的延时
更快的读取速度,GB/s
16
12.8
测试中的平均数值
更快的写入速度,GB/s
12.5
8.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
24
读取速度,GB/s
12.8
16.0
写入速度,GB/s
8.3
12.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2095
2925
Kingston 99U5469-045.A00LF 4GB RAM的比较
Kingston 9905402-664.A00LF 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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