Kingston 99U5471-012.A00 4GB vs Corsair CMD8GX4M2B4000C19 4GB

总分

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

总分

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

差异规格评论

差异

Kingston 99U5471-012.A00 4GB

需要考虑的原因
Kingston 99U5471-012.A00 4GB

报告一个错误

Corsair CMD8GX4M2B4000C19 4GB

需要考虑的原因
Corsair CMD8GX4M2B4000C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 67

左右 -272% 更低的延时
更快的读取速度，GB/s

21.4 6.4

测试中的平均数值
更快的写入速度，GB/s

18.5 3.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00 4GB

Corsair CMD8GX4M2B4000C19 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 18
读取速度，GB/s

6.4 21.4
写入速度，GB/s

3.2 18.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

988 3625

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

Corsair CMD8GX4M2B4000C19 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CMK32GX4M2C3200C18 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Ramaxel Technology RMT3170EF68F9W1600 4GB

Ramaxel Technology RMT3170EF68F9W1600 4GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N