Ramaxel Technology RMT3170EB68F9W1600 4GB vs Crucial Technology CT16G4SFD8213.C16FDD 16GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Crucial Technology CT16G4SFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FDD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

15.1 11.4

测试中的平均数值
更快的写入速度，GB/s

9.9 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

11.4 15.1
写入速度，GB/s

7.7 9.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 2732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3170EF68F9W1600 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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G Skill Intl F4-3600C18-8GTZN 8GB