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Kingston 99U5471-012.A00LF 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
比较
Kingston 99U5471-012.A00LF 4GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
总分
Kingston 99U5471-012.A00LF 4GB
总分
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5471-012.A00LF 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
报告一个错误
低于PassMark测试中的延时,ns
30
41
左右 -37% 更低的延时
更快的读取速度,GB/s
17.6
12.7
测试中的平均数值
更快的写入速度,GB/s
13.9
7.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 99U5471-012.A00LF 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
30
读取速度,GB/s
12.7
17.6
写入速度,GB/s
7.5
13.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2039
3473
Kingston 99U5471-012.A00LF 4GB RAM的比较
Kingston 9905474-019.A00LF 2GB
A-DATA Technology AD5U48008G-B 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM的比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Chun Well Technology Holding Limited CL16-20-20 D4-3200
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. TEAMGROUP-Ind-2666 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
Samsung M471B5773DH0-CH9 2GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5474-013.A00LF 2GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
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