RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Team Group Inc. TEAMGROUP-Ind-2666 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Team Group Inc. TEAMGROUP-Ind-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的读取速度,GB/s
16
15.9
测试中的平均数值
更快的写入速度,GB/s
12.5
12.4
测试中的平均数值
需要考虑的原因
Team Group Inc. TEAMGROUP-Ind-2666 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
24
读取速度,GB/s
16.0
15.9
写入速度,GB/s
12.5
12.4
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2854
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQKD1A08 1GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK4GX4M1D2400C14 4GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX4266C19D4/8GX 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
AMD R5S38G1601U2S 8GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C16-16GISB 16GB
Samsung M378T5663QZ3-CF7 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-4266C17-16GVKB 16GB
PUSKILL DDR3 1600 8G 8GB
Apacer Technology 78.CAGPP.40C0B 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Essencore Limited KD4AGU88C-26N1900 16GB
Samsung M471B5674QH0-YK0 2GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
报告一个错误
×
Bug description
Source link