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Kingston 99U5471-012.A00LF 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston 99U5471-012.A00LF 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分
star star star star star
Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

差异 规格 评论

差异

Kingston 99U5471-012.A00LF 4GB 需要考虑的原因
Kingston 99U5471-012.A00LF 4GB
报告一个错误
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 99U5471-012.A00LF 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 31
  • 读取速度，GB/s
    12.7 left arrow 20.5
  • 写入速度，GB/s
    7.5 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2039 left arrow 3649

Kingston 99U5471-012.A00LF 4GB RAM的比较

Kingston 9905474-019.A00LF 2GB
A-DATA Technology AD5U48008G-B 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 99U5471-056.A00LF 8GB
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内存RAM
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Team Group Inc. TEAMGROUP-UD4-3600 8GB
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G Skill Intl F4-3000C15-8GVKB 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Apacer Technology 78.CAGPP.ARC0B 8GB
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内存RAM
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Kingston 9965525-155.A00LF 8GB
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Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMK32GX4M4A2400C16 8GB
Corsair CMK32GX4M4A2400C16 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
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Corsair CM4X8GE2133C13K4 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM