Samsung M378B5173BH0-CH9 4GB vs Kingston MSI24D4S7D8MB-8 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 38% 更低的延时

Kingston MSI24D4S7D8MB-8 8GB

需要考虑的原因
Kingston MSI24D4S7D8MB-8 8GB

报告一个错误

更快的读取速度，GB/s

13.9 13.4

测试中的平均数值
更快的写入速度，GB/s

11.1 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Kingston MSI24D4S7D8MB-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 37
读取速度，GB/s

13.4 13.9
写入速度，GB/s

8.0 11.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G43DB0-CPB 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology BLS16G4D240FSC.16FD 16GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston HP24D4S7S8MBP-8 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB