Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston MSI24D4S7D8MB-8 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时
更快的读取速度，GB/s

16.7 13.9

测试中的平均数值
更快的写入速度，GB/s

11.8 11.1

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Kingston MSI24D4S7D8MB-8 8GB

需要考虑的原因
Kingston MSI24D4S7D8MB-8 8GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston MSI24D4S7D8MB-8 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

16.7 13.9
写入速度，GB/s

11.8 11.1
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Transcend Information JM2666HSB-8G 8GB

Transcend Information JM2666HSB-8G 8GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB