Samsung M395T5160QZ4-CE66 2GB vs V-GEN D4S8GL32A8TS 8GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 18.7

测试中的平均数值

V-GEN D4S8GL32A8TS 8GB

需要考虑的原因
V-GEN D4S8GL32A8TS 8GB

报告一个错误

低于PassMark测试中的延时，ns

56 75

左右 -34% 更低的延时
更快的写入速度，GB/s

8.9 2,072.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

V-GEN D4S8GL32A8TS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 56
读取速度，GB/s

2,730.3 18.7
写入速度，GB/s

2,072.7 8.9
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965669-025.A00G 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G