RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology BL8G26C16U4R.8FD 8GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.7
    测试中的平均数值
Crucial Technology BL8G26C16U4R.8FD 8GB 需要考虑的原因
Crucial Technology BL8G26C16U4R.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 46
    左右 -59% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 29
  • 读取速度，GB/s
    5,535.6 left arrow 15.7
  • 写入速度，GB/s
    1,852.4 left arrow 13.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3159

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Crucial Technology BL8G26C16U4R.8FD 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905734-059.A00G 16GB
Kingston 9905734-059.A00G 16GB
内存RAM
Kingston ASU16D3LS1KFG/4G 4GB
Kingston ASU16D3LS1KFG/4G 4GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMD8GX4M2B3200C16 4GB
Corsair CMD8GX4M2B3200C16 4GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FJ 2GB
Crucial Technology CT25664AA800.M16FJ 2GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
AMD R538G1601U2S-UGO 8GB
AMD R538G1601U2S-UGO 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK32GX4M2K3600C16 16GB
Corsair CMK32GX4M2K3600C16 16GB
内存RAM