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Kingston 99U5471-020.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
比较
Kingston 99U5471-020.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
总分
Kingston 99U5471-020.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5471-020.A00LF 4GB
报告一个错误
更快的读取速度,GB/s
12.8
10
测试中的平均数值
更快的写入速度,GB/s
8.1
7.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
42
左右 -20% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 99U5471-020.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
35
读取速度,GB/s
12.8
10.0
写入速度,GB/s
8.1
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2123
2068
Kingston 99U5471-020.A00LF 4GB RAM的比较
AMD R538G1601U2S-UO 8GB
Kingston 99P5474-013.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5429-007.A00LF 2GB
Samsung M474A2K43BB1-CPB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Kingston 99U5403-036.A00G 4GB
Essencore Limited KD48GS88C-32N2200 8GB
报告一个错误
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Bug description
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