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Kingston 99U5471-030.A00LF 8GB
V-GEN D4H8GL26A8TS6 8GB

Kingston 99U5471-030.A00LF 8GB vs V-GEN D4H8GL26A8TS6 8GB

总分
star star star star star
Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

总分
star star star star star
V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

差异 规格 评论

差异

Kingston 99U5471-030.A00LF 8GB 需要考虑的原因
Kingston 99U5471-030.A00LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 61
    左右 34% 更低的延时
V-GEN D4H8GL26A8TS6 8GB 需要考虑的原因
V-GEN D4H8GL26A8TS6 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5471-030.A00LF 8GB
V-GEN D4H8GL26A8TS6 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 61
  • 读取速度，GB/s
    12.7 left arrow 17.6
  • 写入速度，GB/s
    7.5 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2201 left arrow 2113

Kingston 99U5471-030.A00LF 8GB RAM的比较

Kingston 99U5403-124.A00LF 8GB
Kingston 9905584-015.A00LF 4GB

V-GEN D4H8GL26A8TS6 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
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内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
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内存RAM
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内存RAM
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内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
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Corsair CMX4GX3M2A1600C9 2GB
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内存RAM
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Micron Technology 16ATF2G64AZ-3G2E1 16GB
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内存RAM