Kingston 99U5471-033.A00LF 4GB vs Corsair CM4B8G2J2666A15D 8GB

总分

Kingston 99U5471-033.A00LF 4GB

Kingston 99U5471-033.A00LF 4GB

总分

Corsair CM4B8G2J2666A15D 8GB

Corsair CM4B8G2J2666A15D 8GB

差异规格评论

差异

Kingston 99U5471-033.A00LF 4GB

需要考虑的原因
Kingston 99U5471-033.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Corsair CM4B8G2J2666A15D 8GB

需要考虑的原因
Corsair CM4B8G2J2666A15D 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.2

测试中的平均数值
更快的写入速度，GB/s

13.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-033.A00LF 4GB

Corsair CM4B8G2J2666A15D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

14.2 16.7
写入速度，GB/s

9.5 13.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 3202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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takeMS International AG TMS2GB264D082-805G 2GB

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Corsair CMK8GX4M2B4133C19 4GB

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Mushkin 996902 2GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Avant Technology H641GU67G1600G 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-4266C19-8GTRS 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

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Kingston 9905471-006.A01LF 4GB

Kingston 9905622-025.A00G 4GB

Kingston 9905622-025.A00G 4GB

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SpecTek Incorporated ?????????????????? 2GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB