Samsung M3 78T5663RZ3-CF7 2GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值
更快的写入速度，GB/s

2,784.6 11.9

测试中的平均数值

SK Hynix HMA81GS6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 65

左右 -91% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

SK Hynix HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 34
读取速度，GB/s

4,806.8 15.7
写入速度，GB/s

2,784.6 11.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

932 2803

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX318C10FR/8G 8GB

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Samsung V-GeN D4S16GL32A8TS 16GB

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SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology CT8G4DFS832A.C8FE 8GB

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Kingston 99U5474-023.A00LF 4GB

Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

Kingston 99U5469-045.A00LF 4GB

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Kllisre M471A3243BB0-CP50 16GB

Kllisre M471A3243BB0-CP50 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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Kingston 9965589-026.D00G 8GB