Kingston 99U5471-052.A00LF 8GB vs Kingston 9905625-098.A00G 16GB

总分

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

总分

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

差异规格评论

差异

Kingston 99U5471-052.A00LF 8GB

需要考虑的原因
Kingston 99U5471-052.A00LF 8GB

报告一个错误

Kingston 9905625-098.A00G 16GB

需要考虑的原因
Kingston 9905625-098.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 -48% 更低的延时
更快的读取速度，GB/s

15.3 12.8

测试中的平均数值
更快的写入速度，GB/s

9.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-052.A00LF 8GB

Kingston 9905625-098.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 27
读取速度，GB/s

12.8 15.3
写入速度，GB/s

7.3 9.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2233 2591

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB