Kingston 99U5471-056.A00LF 8GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异规格评论

差异

Kingston 99U5471-056.A00LF 8GB

需要考虑的原因
Kingston 99U5471-056.A00LF 8GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

16.7 13.3

测试中的平均数值
更快的写入速度，GB/s

13.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-056.A00LF 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

13.3 16.7
写入速度，GB/s

8.6 13.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

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Team Group Inc. UD5-6400 16GB

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Shenzhen Technology Co Ltd 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 99U5665-004.A00G 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3200C16-8GTZ 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Golden Empire CL18-20-20 D4-3600 8GB