Kingston 99U5474-010.A00LF 2GB vs G Skill Intl F4-3200C16-8GVSB 8GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

G Skill Intl F4-3200C16-8GVSB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVSB 8GB

报告一个错误

更快的读取速度，GB/s

17.4 13.8

测试中的平均数值
更快的写入速度，GB/s

13.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3200C16-8GVSB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

13.8 17.4
写入速度，GB/s

7.8 13.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1995 3302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW64GX4M2D3600C18 32GB

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Crucial Technology CT4G4DFS824A.M8FB 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston 99U5474-023.A00LF 4GB

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G Skill Intl F4-3200C16-8GVR 8GB

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NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Samsung M471B1G73QH0-YK0 8GB

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Samsung M471A1K43CB1-CRC 8GB

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Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMD16GX4M2A2400C14 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Team Group Inc. 16GB

Team Group Inc. 16GB