Kingston 99U5474-010.A00LF 2GB vs Kingston 9905700-097.A00G 8GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

Kingston 9905700-097.A00G 8GB

Kingston 9905700-097.A00G 8GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 46% 更低的延时

Kingston 9905700-097.A00G 8GB

需要考虑的原因
Kingston 9905700-097.A00G 8GB

报告一个错误

更快的读取速度，GB/s

17.3 13.8

测试中的平均数值
更快的写入速度，GB/s

9.2 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

Kingston 9905700-097.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 46
读取速度，GB/s

13.8 17.3
写入速度，GB/s

7.8 9.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1995 2324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston 9905700-097.A00G 8GB

Kingston 9905700-097.A00G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9905744-024.A00G 16GB

Kingston 9905744-024.A00G 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston 9905734-073.A00G 16GB

Kingston 9905734-073.A00G 16GB