Kingston 99U5474-013.A00LF 2GB vs Corsair CMK32GX4M4B3333C16 8GB

总分

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

总分

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB

差异规格评论

差异

Kingston 99U5474-013.A00LF 2GB

需要考虑的原因
Kingston 99U5474-013.A00LF 2GB

报告一个错误

Corsair CMK32GX4M4B3333C16 8GB

需要考虑的原因
Corsair CMK32GX4M4B3333C16 8GB

报告一个错误

更快的读取速度，GB/s

18.2 10

测试中的平均数值
更快的写入速度，GB/s

13.4 5.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-013.A00LF 2GB

Corsair CMK32GX4M4B3333C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

10.0 18.2
写入速度，GB/s

5.7 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1435 3604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Samsung M471B5273EB0-CK0 4GB

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Corsair CMU16GX4M2C3200C16 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M378B1G73EB0-CK0 8GB

Kingston KHX2133C14/8G 8GB

Kingston KHX2133C14/8G 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB