Kingston 99U5474-022.A00LF 2GB vs EVGA 16G-D4-2800-MR 4GB

总分

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

差异规格评论

差异

Kingston 99U5474-022.A00LF 2GB

需要考虑的原因
Kingston 99U5474-022.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 33% 更低的延时
更快的写入速度，GB/s

9.5 9.4

测试中的平均数值

EVGA 16G-D4-2800-MR 4GB

需要考虑的原因
EVGA 16G-D4-2800-MR 4GB

报告一个错误

更快的读取速度，GB/s

13.2 13

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-022.A00LF 2GB

EVGA 16G-D4-2800-MR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 39
读取速度，GB/s

13.0 13.2
写入速度，GB/s

9.5 9.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2030 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-156.A00LF 2GB

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Unifosa Corporation HU564404EP0200 4GB

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A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB