Kingston 99U5474-022.A00LF 2GB vs Samsung M471A1G44AB0-CWE 8GB

总分

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异规格评论

差异

Kingston 99U5474-022.A00LF 2GB

需要考虑的原因
Kingston 99U5474-022.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 50

左右 48% 更低的延时

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 13

测试中的平均数值
更快的写入速度，GB/s

10.9 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-022.A00LF 2GB

Samsung M471A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 50
读取速度，GB/s

13.0 15.3
写入速度，GB/s

9.5 10.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2030 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16S4B.8FE 8GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Samsung M393A5143DB0-CRC 4GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9905598-006.A00G 8GB

Kingston 9905598-006.A00G 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston 9905701-029.A00G 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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G Skill Intl F4-3000C16-8GSXFB 8GB

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Samsung M393B1K70CH0-CH9 8GB

Corsair CMW32GX4M2C3000C15 16GB

Corsair CMW32GX4M2C3000C15 16GB