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Kingston 99U5474-023.A00LF 4GB
Kingston KHX2400C14S4/4G 4GB

Kingston 99U5474-023.A00LF 4GB vs Kingston KHX2400C14S4/4G 4GB

总分
star star star star star
Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

总分
star star star star star
Kingston KHX2400C14S4/4G 4GB

Kingston KHX2400C14S4/4G 4GB

差异 规格 评论

差异

Kingston 99U5474-023.A00LF 4GB 需要考虑的原因
Kingston 99U5474-023.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Kingston KHX2400C14S4/4G 4GB 需要考虑的原因
Kingston KHX2400C14S4/4G 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-023.A00LF 4GB
Kingston KHX2400C14S4/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    12.8 left arrow 17.4
  • 写入速度，GB/s
    7.5 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2032 left arrow 2663

Kingston 99U5474-023.A00LF 4GB RAM的比较

Kingston 99U5474-026.A00LF 4GB
Mushkin MR[A/B]4U346GJJM8G 8GB

Kingston KHX2400C14S4/4G 4GB RAM的比较

Micron Technology 8ATF1G64AZ-3G2R1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMT64GX4M8C3200C16 8GB
Corsair CMT64GX4M8C3200C16 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM