Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Samsung M393B2G70QH0-YK0 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Samsung M393B2G70QH0-YK0 16GB

Samsung M393B2G70QH0-YK0 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 63

左右 33% 更低的延时
更快的读取速度，GB/s

10.6 8.1

测试中的平均数值
更快的写入速度，GB/s

7.8 5.8

测试中的平均数值

Samsung M393B2G70QH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70QH0-YK0 16GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M393B2G70QH0-YK0 16GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 63
读取速度，GB/s

10.6 8.1
写入速度，GB/s

7.8 5.8
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2150 1740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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Samsung M471A1G43EB1-CPB 8GB

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Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB