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Kingston 99U5474-028.A00LF 4GB
AMD R744G2606U1S 4GB
比较
Kingston 99U5474-028.A00LF 4GB vs AMD R744G2606U1S 4GB
总分
Kingston 99U5474-028.A00LF 4GB
总分
AMD R744G2606U1S 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5474-028.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
39
76
左右 49% 更低的延时
需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
更快的读取速度,GB/s
15.7
12.6
测试中的平均数值
更快的写入速度,GB/s
8.7
6.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 99U5474-028.A00LF 4GB
AMD R744G2606U1S 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
76
读取速度,GB/s
12.6
15.7
写入速度,GB/s
6.8
8.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1954
1809
Kingston 99U5474-028.A00LF 4GB RAM的比较
Kingston 99U5471-052.A00LF 8GB
Kingston KHX1600C9D3/8G 8GB
AMD R744G2606U1S 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology NT2GC64B88B0NS-CG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFS824A.M8FH 8GB
Samsung M471B5173DB0-YK0 4GB
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Ramaxel Technology RMT3170EB68F9W1600 4GB
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Kingston 9905584-016.A00LF 4GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX3200C18D4/16G 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M378A1K43CB2-CRC 8GB
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